{"id":3857,"date":"2021-05-13T13:33:38","date_gmt":"2021-05-13T13:33:38","guid":{"rendered":"https:\/\/er-c.org\/?page_id=3857"},"modified":"2025-01-09T11:27:11","modified_gmt":"2025-01-09T11:27:11","slug":"p_spacechargelight","status":"publish","type":"page","link":"https:\/\/er-c.org\/index.php\/software\/stem-stm-simulation\/p_spacechargelight\/","title":{"rendered":"P_SpaceChargeLight"},"content":{"rendered":"
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\n\t\t\t\t\t\ttunnel current simulation software package\t\t\t\t\t\t<\/h3>\n\t\t\t\t\t\t<\/div>\n<\/div>\n\n\n
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P_SpaceChargeLight is a tunnel current simulation software package developed by Michael Schnedler. It takes into account the influence of the electric field of a metallic probe tip near a semiconducting surface by solving the Poisson- and continuity equations for holes and electrons in a semiconductor. P_SpaceChargeLight takes into account non-equilibrium charge carriers, generated, e.g., by band-to-band transitions when the semiconductor is excited by laser light.<\/p>\n

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The Poisson- and continuity equations are solved numerically in three dimensions with the help of a finite-difference algorithm. The tunnel current components are calculated in Bardeen’s approximation [1], which has been further developed and adapted by Harrison [2], Bono and Good [3] and Feenstra [4]. For this purpose, the potential and charge carrier concentrations along the central axis through the tip apex are used. Non-equilibrium charge carriers are taken into account in the tunnel current calculation by introducing quasi-Fermini levels. P_SpaceChargeLight is written in the Pascal language and can be compiled for nearly any operating system.<\/p>\n

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The source code is available from GitHub<\/p>\n\n\n\n

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Go To GitHub<\/a><\/div>\n<\/div>\n\n\n\n
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[1] J. Bardeen: Tunnelling from a many-particle point of view<\/a>,<\/strong> Phys. Rev. Lett. 6 (1961) 57-59.<\/p>\n


[2] W. A. Harrison: Tunneling from an independent-particle point of view<\/a><\/strong>, Phys. Rev. 123 (1961) 85-89.<\/p>\n\u00a0\n

[3] J. Bono, R. H. Good Jr.: Theoretical discussion of the scanning tunneling microscope applied to a semiconductor surface<\/strong><\/a>, Surf. Sci. 175 (1986) 415-420.<\/p>\n


[4] R. M. Feenstra, and J. A. Stroscio: Tunneling spectroscopy of the GaAs(110) surface<\/strong><\/a>, J. Vac. Sci. Technol. B 5 (1987) 923-929.<\/p>\n

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